All MOSFET. SE3050 Datasheet

 

SE3050 Datasheet and Replacement


   Type Designator: SE3050
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO252
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SE3050 Datasheet (PDF)

 ..1. Size:410K  cn sino-ic
 se3050 se472.pdf pdf_icon

SE3050

Aug 2015SE3050/SE472N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =30VDSlow gate charge. It can be used in a wide R

 9.1. Size:38K  fairchild semi
 kse3055t.pdf pdf_icon

SE3050

KSE3055TGeneral Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product : fT = 2MHz (Min.)TO-22011.Base 2.Collector 3.EmitterNPN Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-

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History: CS3N150AHR | BUZ84 | IRLR024 | AON6794 | CM20N60P | CED05N8 | BL10N70-A

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