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SE3050 Specs and Replacement

Type Designator: SE3050

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO252

SE3050 substitution

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SE3050 datasheet

 ..1. Size:410K  cn sino-ic
 se3050 se472.pdf pdf_icon

SE3050

Aug 2015 SE3050/SE472 N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V =30V DS low gate charge. It can be used in a wide R ... See More ⇒

 9.1. Size:38K  fairchild semi
 kse3055t.pdf pdf_icon

SE3050

KSE3055T General Purpose and Switching Applications DC Current Gain Specified to IC =10A High Current Gain-Bandwidth Product fT = 2MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector -Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-... See More ⇒

Detailed specifications: SE2N7002, SE2N7002K, SE30100B, SE30150, SE30150A, SE30150B, SE3018, SE30200, IRFB7545, SE472, SE3060D, SE3080A, SE3080K, SE3080G, SE3082G, SE3090K, SE30P09D

Keywords - SE3050 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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