All MOSFET. FCA76N60N Datasheet

 

FCA76N60N Datasheet and Replacement


   Type Designator: FCA76N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 543 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 76 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO3PN
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FCA76N60N Datasheet (PDF)

 ..1. Size:715K  fairchild semi
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FCA76N60N

May 2010SupreMOS TMFCA76N60NN-Channel MOSFET 600V, 76A, 36mFeatures Description RDS(on) = 28m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 218nC)process that differentiates it from preceding multi-epi based Low Effective Ou

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: ME7423S-G | SVGP20110NSTR | ME7232 | MXP4004AT | HUFA75823D3S | 7N80G-TF3-T | MEE42942-G

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