All MOSFET. FCA76N60N Datasheet

 

FCA76N60N Datasheet and Replacement


   Type Designator: FCA76N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 543 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 218 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO3PN
 

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FCA76N60N Datasheet (PDF)

 ..1. Size:715K  fairchild semi
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FCA76N60N

May 2010SupreMOS TMFCA76N60NN-Channel MOSFET 600V, 76A, 36mFeatures Description RDS(on) = 28m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 218nC)process that differentiates it from preceding multi-epi based Low Effective Ou

Datasheet: FCA36N60NF , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 , FQP10N60C , FQPF10N60C , FCA47N60F , IRFZ44 , 2SJ245 , FCB11N60 , 2SK3653 , FCB20N60 , 2SK3057 , 2SK3469-01MR , FCB20N60F , FCB36N60N .

Keywords - FCA76N60N MOSFET datasheet

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