FCA76N60N PDF and Equivalents Search

 

FCA76N60N Specs and Replacement

Type Designator: FCA76N60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 543 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO3PN

FCA76N60N substitution

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FCA76N60N datasheet

 ..1. Size:715K  fairchild semi
 fca76n60n.pdf pdf_icon

FCA76N60N

May 2010 SupreMOS TM FCA76N60N N-Channel MOSFET 600V, 76A, 36m Features Description RDS(on) = 28m ( Typ.)@ VGS = 10V, ID = 38A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 218nC) process that differentiates it from preceding multi-epi based Low Effective Ou... See More ⇒

Detailed specifications: FCA36N60NF , IRF3705 , FCA47N60 , BUZ81 , FCA47N60F109 , FQP10N60C , FQPF10N60C , FCA47N60F , IRFZ44 , 2SJ245 , FCB11N60 , 2SK3653 , FCB20N60 , 2SK3057 , 2SK3469-01MR , FCB20N60F , FCB36N60N .

History: FQP10N60C

Keywords - FCA76N60N MOSFET specs

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