SE3060D PDF and Equivalents Search

 

SE3060D Specs and Replacement

Type Designator: SE3060D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 53 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.5 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: DFN3X3 DFN5X6

SE3060D substitution

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SE3060D datasheet

 ..1. Size:429K  cn sino-ic
 se3060d.pdf pdf_icon

SE3060D

SE3060D N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V =30V DS low gate charge. It can be used in a wide R =5.5m @V =10V DS(ON) GS variety of application R =6m @V =5V DS(ON) GS Pin configurations See Diagram below D D D D 5 6... See More ⇒

Detailed specifications: SE30100B, SE30150, SE30150A, SE30150B, SE3018, SE30200, SE3050, SE472, K2611, SE3080A, SE3080K, SE3080G, SE3082G, SE3090K, SE30P09D, SE30P12, SE30P12D

Keywords - SE3060D MOSFET specs

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