All MOSFET. SE3060D Datasheet

 

SE3060D Datasheet and Replacement


   Type Designator: SE3060D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 53 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: DFN3X3 DFN5X6
 

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SE3060D Datasheet (PDF)

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SE3060D

SE3060DN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =30VDSlow gate charge. It can be used in a wide R =5.5m @V =10VDS(ON) GSvariety of application R =6m @V =5VDS(ON) GSPin configurationsSee Diagram belowD D D D5 6

Datasheet: SE30100B , SE30150 , SE30150A , SE30150B , SE3018 , SE30200 , SE3050 , SE472 , IRF9640 , SE3080A , SE3080K , SE3080G , SE3082G , SE3090K , SE30P09D , SE30P12 , SE30P12D .

History: APT4080BN | 25N10G-TM3-T

Keywords - SE3060D MOSFET datasheet

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