All MOSFET. SE3090K Datasheet

 

SE3090K Datasheet and Replacement


   Type Designator: SE3090K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO252
 

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SE3090K Datasheet (PDF)

 ..1. Size:659K  cn sino-ic
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SE3090K

SE3090KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 30VDSlow gate charge. It can be used in a wide R = 4.1m @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-252Absolute Maximum RatingsParamete

 9.1. Size:805K  winsok
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SE3090K

WSE3099 P-Ch MOSFETGeneral Description Product SummeryThe WSP3099 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 53m -5.0Afor most of the synchronous buck converter applications . Applications The WSP3099 meet the RoHS and Green Product requirement with full function reli

Datasheet: SE30200 , SE3050 , SE472 , SE3060D , SE3080A , SE3080K , SE3080G , SE3082G , AO3407 , SE30P09D , SE30P12 , SE30P12D , SE30P50 , SE30P50B , SE3205A , SE3401B , SE3N150P .

History: AOE6932 | AP4543GEH-HF | PDN2309S | NCE60N1K0I | TSM75N75CZ

Keywords - SE3090K MOSFET datasheet

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