SE3090KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 30VDSlow gate charge. It can be used in a wide R = 4.1m @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-252Absolute Maximum RatingsParamete

WSE3099 P-Ch MOSFETGeneral Description Product SummeryThe WSP3099 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 53m -5.0Afor most of the synchronous buck converter applications . Applications The WSP3099 meet the RoHS and Green Product requirement with full function reli