SE3205A Specs and Replacement
Type Designator: SE3205A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 781 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: TO220
SE3205A substitution
- MOSFET ⓘ Cross-Reference Search
SE3205A datasheet
se3205a.pdf
Dec 2014 SE3205A N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 55V charge. RDS(ON) = 6.5m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin co... See More ⇒
Detailed specifications: SE3080G, SE3082G, SE3090K, SE30P09D, SE30P12, SE30P12D, SE30P50, SE30P50B, IRF3205, SE3401B, SE3N150P, SE40120A, SE40150, SE40160A, SE4020B, SE40300GTS, SE4060
Keywords - SE3205A MOSFET specs
SE3205A cross reference
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SE3205A substitution
SE3205A replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SIHG70N60EF | ELM544599A | AP70WN2K8I
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