SE3205A Datasheet and Replacement
Type Designator: SE3205A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 101 nS
Cossⓘ - Output Capacitance: 781 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
Package: TO220
SE3205A substitution
SE3205A Datasheet (PDF)
se3205a.pdf

Dec 2014 SE3205A N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 55V charge. RDS(ON) = 6.5m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin co
Datasheet: SE3080G , SE3082G , SE3090K , SE30P09D , SE30P12 , SE30P12D , SE30P50 , SE30P50B , IRF3205 , SE3401B , SE3N150P , SE40120A , SE40150 , SE40160A , SE4020B , SE40300GTS , SE4060 .
History: AP4578GH-HF | SE540A | CS5N120W | FDU6676AS | FC8V22080L | IRFS742 | AOLF66910
Keywords - SE3205A MOSFET datasheet
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History: AP4578GH-HF | SE540A | CS5N120W | FDU6676AS | FC8V22080L | IRFS742 | AOLF66910



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