All MOSFET. SE3205A Datasheet

 

SE3205A Datasheet and Replacement


   Type Designator: SE3205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 101 nS
   Cossⓘ - Output Capacitance: 781 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm
   Package: TO220
 

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SE3205A Datasheet (PDF)

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SE3205A

Dec 2014 SE3205A N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate VDS = 55V charge. RDS(ON) = 6.5m @ VGS=10V High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin co

Datasheet: SE3080G , SE3082G , SE3090K , SE30P09D , SE30P12 , SE30P12D , SE30P50 , SE30P50B , IRF3205 , SE3401B , SE3N150P , SE40120A , SE40150 , SE40160A , SE4020B , SE40300GTS , SE4060 .

History: IPS050N03LG | AP4232AGM | HM4606D | AP2602GY | 11NM70G-TM3-T | GP2M007A065XG | 2SJ628

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