SE3N150P PDF and Equivalents Search

 

SE3N150P Specs and Replacement

Type Designator: SE3N150P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 63 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22.5 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm

Package: TO3P

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SE3N150P datasheet

 ..1. Size:492K  cn sino-ic
 se3n150p.pdf pdf_icon

SE3N150P

Oct 2014 SE3N150P N-Channel Enhancement-Mode MOSFET Revision A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, V = 1500V DS such as fast switching time, low gate charge, R =6 @ V =10V DS(ON) GS low on-state resistance and have a high rugged avalanche characteristics Pin configura... See More ⇒

Detailed specifications: SE3090K, SE30P09D, SE30P12, SE30P12D, SE30P50, SE30P50B, SE3205A, SE3401B, IRF840, SE40120A, SE40150, SE40160A, SE4020B, SE40300GTS, SE4060, SE6080S, SE8090S

Keywords - SE3N150P MOSFET specs

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