All MOSFET. SE3N150P Datasheet

 

SE3N150P Datasheet and Replacement


   Type Designator: SE3N150P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22.5 nS
   Cossⓘ - Output Capacitance: 101 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.2 Ohm
   Package: TO3P
 

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SE3N150P Datasheet (PDF)

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SE3N150P

Oct 2014SE3N150PN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis series is a high voltage power MOSFET For a single MOSFETand is designed to have better characteristics, V = 1500VDSsuch as fast switching time, low gate charge, R =6 @ V =10VDS(ON) GSlow on-state resistance and have a highrugged avalanche characteristicsPin configura

Datasheet: SE3090K , SE30P09D , SE30P12 , SE30P12D , SE30P50 , SE30P50B , SE3205A , SE3401B , IRF840 , SE40120A , SE40150 , SE40160A , SE4020B , SE40300GTS , SE4060 , SE6080S , SE8090S .

History: TSM6981DCA

Keywords - SE3N150P MOSFET datasheet

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