All MOSFET. SE40300GTS Datasheet

 

SE40300GTS Datasheet and Replacement


   Type Designator: SE40300GTS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 288 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO247S
 

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SE40300GTS Datasheet (PDF)

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SE40300GTS

SE40300GTSN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through FOM R =1.7m @V =10VDS(ON) GS Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Datasheet: SE30P50B , SE3205A , SE3401B , SE3N150P , SE40120A , SE40150 , SE40160A , SE4020B , IRF640 , SE4060 , SE6080S , SE8090S , SE4060GB , SE40P20B , SE4435 , SE4606 , SE4606L .

History: PSMN6R0-30YLD | SI2324DS-T1-GE3 | SE2N7002K | AP4420GJ | IRF3709 | AP86T02GH | QM3005D

Keywords - SE40300GTS MOSFET datasheet

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