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SE40300GTS PDF Specs and Replacement


   Type Designator: SE40300GTS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 288 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO247S
 

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SE40300GTS PDF Specs

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SE40300GTS

SE40300GTS N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =40V DS Voltage and Current Improved Shoot-Through FOM R =1.7m @V =10V DS(ON) GS Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

Detailed specifications: SE30P50B , SE3205A , SE3401B , SE3N150P , SE40120A , SE40150 , SE40160A , SE4020B , IRFP460 , SE4060 , SE6080S , SE8090S , SE4060GB , SE40P20B , SE4435 , SE4606 , SE4606L .

History: SL60N10Q

Keywords - SE40300GTS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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