SE6080S MOSFET Datasheet: N-Ch, 60V, 80A. Full specification with pinout and replacement list

SE6080S Specs and Replacement

Type Designator: SE6080S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 960 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: SOP8

SE6080S substitution

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SE6080S datasheet

..1. Size:910K cn sino-ic
se4060 se6080s se8090s.pdf pdf_icon

May 2015 SE4060,SE6080S,SE8090S N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =40V DS Voltage and Current Improved Shoot-Through R =7m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device... See More ⇒

8.1. Size:437K cn sino-ic
se6080a.pdf pdf_icon

Dec 2014 SE6080A N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =60V DS charge. R =6.5m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurat... See More ⇒

Detailed specifications: SE3401B, SE3N150P, SE40120A, SE40150, SE40160A, SE4020B, SE40300GTS, SE4060, IRF640, SE8090S, SE4060GB, SE40P20B, SE4435, SE4606, SE4606L, SE4606S, SE4607