All MOSFET. SE4060GB Datasheet

 

SE4060GB Datasheet and Replacement


   Type Designator: SE4060GB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: TO252
 

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SE4060GB Datasheet (PDF)

 ..1. Size:340K  cn sino-ic
 se4060gb.pdf pdf_icon

SE4060GB

SE4060GBN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =45VDSVoltage and Current Improved Shoot-Through R =7.5m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

 8.1. Size:910K  cn sino-ic
 se4060 se6080s se8090s.pdf pdf_icon

SE4060GB

May 2015SE4060,SE6080S,SE8090SN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through R =7m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount Device

Datasheet: SE40120A , SE40150 , SE40160A , SE4020B , SE40300GTS , SE4060 , SE6080S , SE8090S , IRFP260N , SE40P20B , SE4435 , SE4606 , SE4606L , SE4606S , SE4607 , SE4610 , SE4625 .

History: BL6N70A-D | SUD50N03-12P | CMLDM7003 | ME6980ED-G | MTP5210F3 | BSC010N04LSI | SSM6J207FE

Keywords - SE4060GB MOSFET datasheet

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