SE4435 PDF Specs and Replacement
Type Designator: SE4435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOP8
SE4435 substitution
SE4435 PDF Specs
se4435.pdf
SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE4435 30V P-Channel MOSFET Revision A General Description Features The MOSFETs from SINO-IC provide RDS(ON) ... See More ⇒
Detailed specifications: SE40160A , SE4020B , SE40300GTS , SE4060 , SE6080S , SE8090S , SE4060GB , SE40P20B , IRF640N , SE4606 , SE4606L , SE4606S , SE4607 , SE4610 , SE4625 , SE47NS65TS , SE4942B .
History: NTHL040N65S3F
Keywords - SE4435 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: NTHL040N65S3F
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MOSFET: AP50N04Q | AP50N04K | AP50N04GD
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