All MOSFET. SE4625 Datasheet

 

SE4625 Datasheet and Replacement


   Type Designator: SE4625
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: DFN2X2-6
 

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SE4625 Datasheet (PDF)

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SE4625

SE4625Complementary Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For N-Channel MOSFETexcellent RDS(ON), low gate charge and low V = 12VDSoperation voltage. This device is suitable for using R = 28m@V =4.5VDS(ON) GSas a load switch or in PWM applications. Low R For P-Channel MOSFETDS(on) Small Packag

Datasheet: SE4060GB , SE40P20B , SE4435 , SE4606 , SE4606L , SE4606S , SE4607 , SE4610 , IRFB4110 , SE47NS65TS , SE4942B , SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B .

History: FQD1N60CTM | AP3P7R0EJB

Keywords - SE4625 MOSFET datasheet

 SE4625 cross reference
 SE4625 equivalent finder
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