SE4625 PDF and Equivalents Search

 

SE4625 Specs and Replacement

Type Designator: SE4625

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 125 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm

Package: DFN2X2-6

SE4625 substitution

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SE4625 datasheet

 ..1. Size:1083K  cn sino-ic
 se4625.pdf pdf_icon

SE4625

SE4625 Complementary Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For N-Channel MOSFET excellent RDS(ON), low gate charge and low V = 12V DS operation voltage. This device is suitable for using R = 28m @V =4.5V DS(ON) GS as a load switch or in PWM applications. Low R For P-Channel MOSFET DS(on) Small Packag... See More ⇒

Detailed specifications: SE4060GB, SE40P20B, SE4435, SE4606, SE4606L, SE4606S, SE4607, SE4610, AON6414A, SE47NS65TS, SE4942B, SE4946, SE4953, SE4N65, SE540A, SE6003C, SE60120B

Keywords - SE4625 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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