All MOSFET. SE4942B Datasheet

 

SE4942B Datasheet and Replacement


   Type Designator: SE4942B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 124 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8
 

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SE4942B Datasheet (PDF)

 ..1. Size:801K  cn sino-ic
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SE4942B

May 2015SE4942BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through R =7m @V =10VDS(ON) GSFOM R =16m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline

 9.1. Size:314K  cn sino-ic
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SE4942B

SHANGHAI July 2007 MICROELECTRONICS CO., LTD. SE4946 Dual N-Channel Enhancement-Mode MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 6.5A (VGS = 10V) on-resistance and cost-effectiveness. RDS(ON) =41m (VGS = 10V) RDS(ON) =52m (VGS = 4.5V) Pin configurations Se

Datasheet: SE4435 , SE4606 , SE4606L , SE4606S , SE4607 , SE4610 , SE4625 , SE47NS65TS , IRF9540 , SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B .

History: BUK9Y2R8-40H | IPB120N08S4-03 | C3M0065100K | CS65N20-30 | IXFV110N10P | DMG8880LSS | SQM90142E

Keywords - SE4942B MOSFET datasheet

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