SE4942B MOSFET Datasheet: N-Ch, 40V, 12A. Full specification with pinout and replacement list

SE4942B Specs and Replacement

Type Designator: SE4942B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 124 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SOP8

SE4942B substitution

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SE4942B datasheet

..1. Size:801K cn sino-ic
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May 2015 SE4942B N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =40V DS Voltage and Current Improved Shoot-Through R =7m @V =10V DS(ON) GS FOM R =16m @V =4.5V DS(ON) GS Simple Drive Requirement Small Package Outline ... See More ⇒

9.1. Size:314K cn sino-ic
se4946.pdf pdf_icon

SHANGHAI July 2007 MICROELECTRONICS CO., LTD. SE4946 Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 6.5A (VGS = 10V) on-resistance and cost-effectiveness. RDS(ON) =41m (VGS = 10V) RDS(ON) =52m (VGS = 4.5V) Pin configurations Se... See More ⇒

Detailed specifications: SE4435, SE4606, SE4606L, SE4606S, SE4607, SE4610, SE4625, SE47NS65TS, 2N7000, SE4946, SE4953, SE4N65, SE540A, SE6003C, SE60120B, SE60120GTS, SE6016B