SE4942B Datasheet and Replacement
Type Designator: SE4942B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 124 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOP8
SE4942B substitution
SE4942B Datasheet (PDF)
se4942b.pdf

May 2015SE4942BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through R =7m @V =10VDS(ON) GSFOM R =16m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline
se4946.pdf

SHANGHAI July 2007 MICROELECTRONICS CO., LTD. SE4946 Dual N-Channel Enhancement-Mode MOSFET Revision:A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 60V the best combination of fast switching, low ID = 6.5A (VGS = 10V) on-resistance and cost-effectiveness. RDS(ON) =41m (VGS = 10V) RDS(ON) =52m (VGS = 4.5V) Pin configurations Se
Datasheet: SE4435 , SE4606 , SE4606L , SE4606S , SE4607 , SE4610 , SE4625 , SE47NS65TS , IRFP250N , SE4946 , SE4953 , SE4N65 , SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B .
History: 2SK538 | STL70N10F3 | NTHS4101PT1G | 2SK3541MGP | SFS12R08PNF | FDZ375P
Keywords - SE4942B MOSFET datasheet
SE4942B cross reference
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History: 2SK538 | STL70N10F3 | NTHS4101PT1G | 2SK3541MGP | SFS12R08PNF | FDZ375P



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