SE4N65 Specs and Replacement
Type Designator: SE4N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 23.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
SE4N65 substitution
- MOSFET ⓘ Cross-Reference Search
SE4N65 datasheet
se4n65.pdf
Oct 2014 SE4N65 N-Channel Enhancement-Mode MOSFET Revision A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, VDS = 650V such as fast switching time, low gate charge, RDS(ON) = 2.224 @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin c... See More ⇒
Detailed specifications: SE4606S, SE4607, SE4610, SE4625, SE47NS65TS, SE4942B, SE4946, SE4953, 7N65, SE540A, SE6003C, SE60120B, SE60120GTS, SE6016B, SE6020B, SE6020DB, SE60210GA
Keywords - SE4N65 MOSFET specs
SE4N65 cross reference
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SE4N65 substitution
SE4N65 replacement
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