SE4N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: SE4N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 23.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.5 nC
trⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 60 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO220F TO252 TO251
SE4N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE4N65 Datasheet (PDF)
se4n65.pdf
Oct 2014 SE4N65 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, VDS = 650V such as fast switching time, low gate charge, RDS(ON) = 2.224 @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin c
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