All MOSFET. SE4N65 Datasheet

 

SE4N65 Datasheet and Replacement


   Type Designator: SE4N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 23.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO220F TO252 TO251
 

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SE4N65 Datasheet (PDF)

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SE4N65

Oct 2014 SE4N65 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features This series is a high voltage power MOSFET For a single MOSFET and is designed to have better characteristics, VDS = 650V such as fast switching time, low gate charge, RDS(ON) = 2.224 @ VGS=10V low on-state resistance and have a high rugged avalanche characteristics Pin c

Datasheet: SE4606S , SE4607 , SE4610 , SE4625 , SE47NS65TS , SE4942B , SE4946 , SE4953 , AON7408 , SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA .

History: SWD15N65J | TMW20N65HG | SWD13N60K2 | 2SK211

Keywords - SE4N65 MOSFET datasheet

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