SE540A Datasheet and Replacement
Type Designator: SE540A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 33 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 57 nS
Cossⓘ - Output Capacitance: 295 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO220
SE540A substitution
SE540A Datasheet (PDF)
se540a.pdf

SE540A N-Channel Enhancement-Mode MOSFET Revision: A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche VDS = 100V Voltage and Current Improved Shoot-Through RDS(ON) = 33m @ VGS=10 FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurat
Datasheet: SE4607 , SE4610 , SE4625 , SE47NS65TS , SE4942B , SE4946 , SE4953 , SE4N65 , AON7408 , SE6003C , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA , SE60300G .
History: AP6N1R7CDT | SLD80R850SJ | CSFR3N60U | 1N65G-TA3-T | AP40N03GP-HF | DMN3070SSN | PKCE9BB
Keywords - SE540A MOSFET datasheet
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History: AP6N1R7CDT | SLD80R850SJ | CSFR3N60U | 1N65G-TA3-T | AP40N03GP-HF | DMN3070SSN | PKCE9BB



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