All MOSFET. SE6003C Datasheet

 

SE6003C MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE6003C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO251

 SE6003C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE6003C Datasheet (PDF)

 ..1. Size:325K  cn sino-ic
 se6003c.pdf

SE6003C SE6003C

SE6003CN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =85m @V =10VDS(ON) GSFOM R =105m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline Surface

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: HYG013N03LS1C2 | SSP5N80A | MCH3476

 

 
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