All MOSFET. SE6003C Datasheet

 

SE6003C Datasheet and Replacement


   Type Designator: SE6003C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO251
      - MOSFET Cross-Reference Search

 

SE6003C Datasheet (PDF)

 ..1. Size:325K  cn sino-ic
 se6003c.pdf pdf_icon

SE6003C

SE6003CN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =85m @V =10VDS(ON) GSFOM R =105m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline Surface

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: HUF75925D3ST | FDU3706 | HFS4N50 | SI2308 | SDF250JAB | UTT4815 | SFF11N80P

Keywords - SE6003C MOSFET datasheet

 SE6003C cross reference
 SE6003C equivalent finder
 SE6003C lookup
 SE6003C substitution
 SE6003C replacement

 

 
Back to Top

 


 
.