SE6003C PDF and Equivalents Search

 

SE6003C Specs and Replacement

Type Designator: SE6003C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 34 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO251

SE6003C substitution

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SE6003C datasheet

 ..1. Size:325K  cn sino-ic
 se6003c.pdf pdf_icon

SE6003C

SE6003C N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =60V DS Voltage and Current Improved Shoot-Through R =85m @V =10V DS(ON) GS FOM R =105m @V =4.5V DS(ON) GS Simple Drive Requirement Small Package Outline Surface ... See More ⇒

Detailed specifications: SE4610, SE4625, SE47NS65TS, SE4942B, SE4946, SE4953, SE4N65, SE540A, IRF630, SE60120B, SE60120GTS, SE6016B, SE6020B, SE6020DB, SE60210GA, SE60300G, SE6050B

Keywords - SE6003C MOSFET specs

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