All MOSFET. SE6003C Datasheet

 

SE6003C Datasheet and Replacement


   Type Designator: SE6003C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 34 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO251
 

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SE6003C Datasheet (PDF)

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SE6003C

SE6003CN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =60VDSVoltage and Current Improved Shoot-Through R =85m @V =10VDS(ON) GSFOM R =105m @V =4.5VDS(ON) GS Simple Drive Requirement Small Package Outline Surface

Datasheet: SE4610 , SE4625 , SE47NS65TS , SE4942B , SE4946 , SE4953 , SE4N65 , SE540A , IRF630 , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA , SE60300G , SE6050B .

History: SLF80R240SJ | ISCNH372B | SM4028NSUC-TRG | RU30120R | CM10N65AFZ | RU30C30M | BTS282Z

Keywords - SE6003C MOSFET datasheet

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