SE60300G MOSFET. Datasheet pdf. Equivalent
Type Designator: SE60300G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 230 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 2140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: TO247 DFN5X6
SE60300G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE60300G Datasheet (PDF)
..1. Size:340K cn sino-ic
se60300g.pdf
se60300g.pdf
Dec 2014SE60300GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =60VDScharge. R =1.6m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configura
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