SE60300G Specs and Replacement
Type Designator: SE60300G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 230 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 2140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
SE60300G substitution
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SE60300G datasheet
se60300g.pdf
Dec 2014 SE60300G N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =60V DS charge. R =1.6m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configura... See More ⇒
Detailed specifications: SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA , IRF4905 , SE6050B , SE6080A , SE60P20B , SE630K , SE6880A , SE720 , SE7314 , SE7401P .
Keywords - SE60300G MOSFET specs
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