All MOSFET. SE60300G Datasheet

 

SE60300G Datasheet and Replacement


   Type Designator: SE60300G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 230 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 2140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: TO247 DFN5X6
 

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SE60300G Datasheet (PDF)

 ..1. Size:340K  cn sino-ic
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SE60300G

Dec 2014SE60300GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =60VDScharge. R =1.6m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configura

Datasheet: SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA , IRF4905 , SE6050B , SE6080A , SE60P20B , SE630K , SE6880A , SE720 , SE7314 , SE7401P .

History: CEB6086 | AP60WN2K3H

Keywords - SE60300G MOSFET datasheet

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