SE60300G Datasheet and Replacement
Type Designator: SE60300G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 230 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 2140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
Package: TO247 DFN5X6
SE60300G substitution
SE60300G Datasheet (PDF)
se60300g.pdf
Dec 2014SE60300GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =60VDScharge. R =1.6m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configura
Datasheet: SE540A , SE6003C , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA , 2N7000 , SE6050B , SE6080A , SE60P20B , SE630K , SE6880A , SE720 , SE7314 , SE7401P .
History: BUZ103S-4 | WMS17P03TS
Keywords - SE60300G MOSFET datasheet
SE60300G cross reference
SE60300G equivalent finder
SE60300G lookup
SE60300G substitution
SE60300G replacement
History: BUZ103S-4 | WMS17P03TS
LIST
Last Update
MOSFET: APJ10N65P | APJ10N65T | APJ10N65F | AP65R950 | APJ10N65D | APG80N10T | APG80N10P | APG80N10NF | APG60N10T | APG60N10P | AP100P02NF | AP100N08D | AP100N04NF | AP100N04D | AP100N03Y | AP100N03T
MDT7N65 | MDT70N03 | MDT60NF06D | MDT60N10D | MDT60N06D | MDT5N65 | MPG100N08P | MPG100N07S | MPG100N07P | MPG100N06S | MPG100N06P | MPF9N20 | MPF8N65 | MPF5N65 | MPF50N25 | MPF40N25 | MPF3N150 | MPF2N60 | MDT50N06D | MDT40N10D | MDT40N06D | MDT30N10D | MDT30N10 | MDT30N06L | MDT2N60 | MDT20P04D
Popular searches
ksa992 transistor | 2n2926 | ksa992 pinout | 2n1308 transistor | p609 | bc327-40 | tip125 | a992 transistor