SE6050B MOSFET. Datasheet pdf. Equivalent
Type Designator: SE6050B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 104 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
SE6050B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE6050B Datasheet (PDF)
..1. Size:430K cn sino-ic
se6050b.pdf
se6050b.pdf
SE6050BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =60VDSlow gate charge. It can be used in a wide R =11m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowGDTO-252SAbsolute Maximum RatingsPa
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
