All MOSFET. SE6050B Datasheet

 

SE6050B Datasheet and Replacement


   Type Designator: SE6050B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252
 

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SE6050B Datasheet (PDF)

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SE6050B

SE6050BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =60VDSlow gate charge. It can be used in a wide R =11m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowGDTO-252SAbsolute Maximum RatingsPa

Datasheet: SE6003C , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA , SE60300G , 5N60 , SE6080A , SE60P20B , SE630K , SE6880A , SE720 , SE7314 , SE7401P , SE7401U .

History: NVMFD6H852NL | FQU3P50TU

Keywords - SE6050B MOSFET datasheet

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