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SE6050B Specs and Replacement

Type Designator: SE6050B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 80 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 104 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO252

SE6050B substitution

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SE6050B datasheet

 ..1. Size:430K  cn sino-ic
 se6050b.pdf pdf_icon

SE6050B

SE6050B N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V =60V DS low gate charge. It can be used in a wide R =11m @V =10V DS(ON) GS variety of application Pin configurations See Diagram below G D TO-252 S Absolute Maximum Ratings Pa... See More ⇒

Detailed specifications: SE6003C, SE60120B, SE60120GTS, SE6016B, SE6020B, SE6020DB, SE60210GA, SE60300G, IRLB4132, SE6080A, SE60P20B, SE630K, SE6880A, SE720, SE7314, SE7401P, SE7401U

Keywords - SE6050B MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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