SE6050B Datasheet and Replacement
Type Designator: SE6050B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 80 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 104 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
SE6050B substitution
SE6050B Datasheet (PDF)
se6050b.pdf
SE6050BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =60VDSlow gate charge. It can be used in a wide R =11m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowGDTO-252SAbsolute Maximum RatingsPa
Datasheet: SE6003C , SE60120B , SE60120GTS , SE6016B , SE6020B , SE6020DB , SE60210GA , SE60300G , IRLB4132 , SE6080A , SE60P20B , SE630K , SE6880A , SE720 , SE7314 , SE7401P , SE7401U .
History: PNM3FD201E0 | SW4N65B | 2SK4070 | AP6679GS-A
Keywords - SE6050B MOSFET datasheet
SE6050B cross reference
SE6050B equivalent finder
SE6050B lookup
SE6050B substitution
SE6050B replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: PNM3FD201E0 | SW4N65B | 2SK4070 | AP6679GS-A
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