SE6080A Specs and Replacement
Type Designator: SE6080A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 960 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO220
SE6080A substitution
- MOSFET ⓘ Cross-Reference Search
SE6080A datasheet
se6080a.pdf
Dec 2014 SE6080A N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =60V DS charge. R =6.5m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurat... See More ⇒
se4060 se6080s se8090s.pdf
May 2015 SE4060,SE6080S,SE8090S N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =40V DS Voltage and Current Improved Shoot-Through R =7m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device... See More ⇒
Detailed specifications: SE60120B, SE60120GTS, SE6016B, SE6020B, SE6020DB, SE60210GA, SE60300G, SE6050B, AO3401, SE60P20B, SE630K, SE6880A, SE720, SE7314, SE7401P, SE7401U, SE80100GA
Keywords - SE6080A MOSFET specs
SE6080A cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: NTD5807NT4G
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