All MOSFET. SE6080A Datasheet

 

SE6080A Datasheet and Replacement


   Type Designator: SE6080A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO220
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SE6080A Datasheet (PDF)

 ..1. Size:437K  cn sino-ic
 se6080a.pdf pdf_icon

SE6080A

Dec 2014SE6080AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =60VDScharge. R =6.5m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurat

 8.1. Size:910K  cn sino-ic
 se4060 se6080s se8090s.pdf pdf_icon

SE6080A

May 2015SE4060,SE6080S,SE8090SN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =40VDSVoltage and Current Improved Shoot-Through R =7m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount Device

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History: P5002CDG | HLML6401 | IPP04N03LBG | NDB6051L | DMG4511SK4 | AUIRFS3206 | AP85T03GH-HF

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