All MOSFET. SE630K Datasheet

 

SE630K Datasheet and Replacement


   Type Designator: SE630K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: TO252
 

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SE630K Datasheet (PDF)

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SE630K

SE630KN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 200VDSlow gate charge. It can be used in a wide R =260m @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-252Absolute Maximum RatingsParameter

Datasheet: SE6016B , SE6020B , SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B , 8205A , SE6880A , SE720 , SE7314 , SE7401P , SE7401U , SE80100GA , SE80130G , SE80130GA .

History: PDN2309S | AP4543GEH-HF | TSM75N75CZ | NCE60N1K0I

Keywords - SE630K MOSFET datasheet

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