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SE630K Specs and Replacement

Type Designator: SE630K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm

Package: TO252

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SE630K datasheet

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SE630K

SE630K N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V = 200V DS low gate charge. It can be used in a wide R =260m @ V =10V DS(ON) GS variety of application Pin configurations See Diagram below TO-252 Absolute Maximum Ratings Parameter... See More ⇒

Detailed specifications: SE6016B, SE6020B, SE6020DB, SE60210GA, SE60300G, SE6050B, SE6080A, SE60P20B, IRFP260, SE6880A, SE720, SE7314, SE7401P, SE7401U, SE80100GA, SE80130G, SE80130GA

Keywords - SE630K MOSFET specs

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