SE720 Datasheet and Replacement
Type Designator: SE720
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: DFN2X2X0.75
SE720 substitution
SE720 Datasheet (PDF)
se720.pdf

Sep 2015SE720PNP Low VCEsat Transistor with N-Channel Trench MOSFETRevision: AGeneral Description FeaturesCombination of PNP low VCEsat Breakthrough in For a single MOSFETSmall Signal transistor and N-Channel Trench V = 20VDSMOSFET R = 500m @V =4.5VDS(ON) GS Simple Drive Requirement R = 900m @V =2.5VDS(ON) GS Small Package Outline Surface
Datasheet: SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B , SE630K , SE6880A , AON7410 , SE7314 , SE7401P , SE7401U , SE80100GA , SE80130G , SE80130GA , SE80160G , SE80250G .
History: AP8N010LM | LND06R062 | NP82N04NUG | IXTH60N15 | FCH023N65S3 | 2P979V | 2SK3501-01
Keywords - SE720 MOSFET datasheet
SE720 cross reference
SE720 equivalent finder
SE720 lookup
SE720 substitution
SE720 replacement
History: AP8N010LM | LND06R062 | NP82N04NUG | IXTH60N15 | FCH023N65S3 | 2P979V | 2SK3501-01



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