All MOSFET. SE720 Datasheet

 

SE720 Datasheet and Replacement


   Type Designator: SE720
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: DFN2X2X0.75
 

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SE720 Datasheet (PDF)

 ..1. Size:376K  cn sino-ic
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SE720

Sep 2015SE720PNP Low VCEsat Transistor with N-Channel Trench MOSFETRevision: AGeneral Description FeaturesCombination of PNP low VCEsat Breakthrough in For a single MOSFETSmall Signal transistor and N-Channel Trench V = 20VDSMOSFET R = 500m @V =4.5VDS(ON) GS Simple Drive Requirement R = 900m @V =2.5VDS(ON) GS Small Package Outline Surface

Datasheet: SE6020DB , SE60210GA , SE60300G , SE6050B , SE6080A , SE60P20B , SE630K , SE6880A , AON7410 , SE7314 , SE7401P , SE7401U , SE80100GA , SE80130G , SE80130GA , SE80160G , SE80250G .

History: AON7528 | FDFS2P753AZ | HGA110N10SL | SSM3J35FS | 1N60L-T60-K

Keywords - SE720 MOSFET datasheet

 SE720 cross reference
 SE720 equivalent finder
 SE720 lookup
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