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SE720 Specs and Replacement

Type Designator: SE720

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: DFN2X2X0.75

SE720 substitution

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SE720 datasheet

 ..1. Size:376K  cn sino-ic
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SE720

Sep 2015 SE720 PNP Low VCEsat Transistor with N-Channel Trench MOSFET Revision A General Description Features Combination of PNP low VCEsat Breakthrough in For a single MOSFET Small Signal transistor and N-Channel Trench V = 20V DS MOSFET R = 500m @V =4.5V DS(ON) GS Simple Drive Requirement R = 900m @V =2.5V DS(ON) GS Small Package Outline Surface ... See More ⇒

Detailed specifications: SE6020DB, SE60210GA, SE60300G, SE6050B, SE6080A, SE60P20B, SE630K, SE6880A, SPP20N60C3, SE7314, SE7401P, SE7401U, SE80100GA, SE80130G, SE80130GA, SE80160G, SE80250G

Keywords - SE720 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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