All MOSFET. SE7314 Datasheet

 

SE7314 Datasheet and Replacement


   Type Designator: SE7314
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 191 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SOP8
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SE7314 Datasheet (PDF)

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SE7314

SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE7314 Dual-20V P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE7314 is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 68m @VGS= -1.8VID = -2A used to minimize on-state resistance. This RDS(on)= 52m @VGS= -2.5VID = -4.1A device

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History: 4N100L-TA3-T

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