SE7314 Specs and Replacement
Type Designator: SE7314
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 191 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: SOP8
SE7314 substitution
- MOSFET ⓘ Cross-Reference Search
SE7314 datasheet
se7314.pdf
SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE7314 Dual-20V P-Channel Enhancement-Mode MOSFET Revision A General Description Features SE7314 is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 68m @VGS= -1.8V ID = -2A used to minimize on-state resistance. This RDS(on)= 52m @VGS= -2.5V ID = -4.1A device... See More ⇒
Detailed specifications: SE60210GA, SE60300G, SE6050B, SE6080A, SE60P20B, SE630K, SE6880A, SE720, SKD502T, SE7401P, SE7401U, SE80100GA, SE80130G, SE80130GA, SE80160G, SE80250G, SE8090A
Keywords - SE7314 MOSFET specs
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