SE7314 MOSFET. Datasheet pdf. Equivalent
Type Designator: SE7314
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 4.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 191 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: SOP8
SE7314 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE7314 Datasheet (PDF)
se7314.pdf
SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE7314 Dual-20V P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE7314 is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 68m @VGS= -1.8VID = -2A used to minimize on-state resistance. This RDS(on)= 52m @VGS= -2.5VID = -4.1A device
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: WMJ38N60C2
History: WMJ38N60C2
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918