SE7401P MOSFET Datasheet: P-Ch, 20V, 2.2A. Full specification with pinout and replacement list

SE7401P Specs and Replacement

Type Designator: SE7401P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.7 max nS

Cossⓘ - Output Capacitance: 138 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: SOT363

SE7401P substitution

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SE7401P datasheet

..1. Size:512K cn sino-ic
se7401p.pdf pdf_icon

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401P 20V P-Channel Enhancement-Mode MOSFET Revision B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene... See More ⇒

8.1. Size:508K cn sino-ic
se7401u.pdf pdf_icon

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE7401U 20V P-Channel Enhancement-Mode MOSFET Revision B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 120m @ VGS=-4.50V @Ids=-2.0A RDS(ON) = 150m @ VGS=-2.50V @Ids=-1.8A Gene... See More ⇒

Detailed specifications: SE60300G, SE6050B, SE6080A, SE60P20B, SE630K, SE6880A, SE720, SE7314, K4145, SE7401U, SE80100GA, SE80130G, SE80130GA, SE80160G, SE80250G, SE8090A, SE8090G