All MOSFET. SE8205A Datasheet

 

SE8205A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0245 Ohm
   Package: SOT23-6

 SE8205A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE8205A Datasheet (PDF)

 ..1. Size:422K  cn sino-ic
 se8205a.pdf

SE8205A SE8205A

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE8205A N-Channel Enhancement Mode Field Effect Transistor Revision:B External Dimensions: (Unit:mm) Features VDS = 20V,ID = 6A RDS(ON)

 9.1. Size:366K  cn sino-ic
 se8209.pdf

SE8205A SE8205A

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8209 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON) = 26m @ VGS=4.0V @Ids=5A RDS(ON) = 40m @ VGS=2.5V @Ids=3A Applications Battery protection Load switch Power management Construction Silicon epitaxial planer Absolute Max

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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