All MOSFET. SE8205A Datasheet

 

SE8205A Datasheet and Replacement


   Type Designator: SE8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0245 Ohm
   Package: SOT23-6
 

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SE8205A Datasheet (PDF)

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SE8205A

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE8205A N-Channel Enhancement Mode Field Effect Transistor Revision:B External Dimensions: (Unit:mm) Features VDS = 20V,ID = 6A RDS(ON)

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SE8205A

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8209 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON) = 26m @ VGS=4.0V @Ids=5A RDS(ON) = 40m @ VGS=2.5V @Ids=3A Applications Battery protection Load switch Power management Construction Silicon epitaxial planer Absolute Max

Datasheet: SE7401U , SE80100GA , SE80130G , SE80130GA , SE80160G , SE80250G , SE8090A , SE8090G , IRLB4132 , SE8209 , SE85130GA , SE85210 , SE8810 , SE8810A , SE8830T , SE8830A , SED8830MP .

History: P3003EDG | PT9435 | P8008HV | MRF5035 | IPC70N04S5-4R6 | FDS6162N3 | CEB85A3

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