All MOSFET. SE8209 Datasheet

 

SE8209 Datasheet and Replacement


   Type Designator: SE8209
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TSSOP
 
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SE8209 Datasheet (PDF)

 ..1. Size:366K  cn sino-ic
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SE8209

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8209 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON) = 26m @ VGS=4.0V @Ids=5A RDS(ON) = 40m @ VGS=2.5V @Ids=3A Applications Battery protection Load switch Power management Construction Silicon epitaxial planer Absolute Max

 9.1. Size:422K  cn sino-ic
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SE8209

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE8205A N-Channel Enhancement Mode Field Effect Transistor Revision:B External Dimensions: (Unit:mm) Features VDS = 20V,ID = 6A RDS(ON)

Datasheet: SE80100GA , SE80130G , SE80130GA , SE80160G , SE80250G , SE8090A , SE8090G , SE8205A , IRFP450 , SE85130GA , SE85210 , SE8810 , SE8810A , SE8830T , SE8830A , SED8830MP , SED8830 .

History: RTQ045N03

Keywords - SE8209 MOSFET datasheet

 SE8209 cross reference
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