All MOSFET. SE85130GA Datasheet

 

SE85130GA Datasheet and Replacement


   Type Designator: SE85130GA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220
 

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SE85130GA Datasheet (PDF)

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SE85130GA

SE85130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = 85VDSoperation voltage. This device is suitable for R =4.6m @ V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

Datasheet: SE80130G , SE80130GA , SE80160G , SE80250G , SE8090A , SE8090G , SE8205A , SE8209 , IRFP250 , SE85210 , SE8810 , SE8810A , SE8830T , SE8830A , SED8830MP , SED8830 , SED8830P .

History: PSMN012-60MS | 2SK494 | SPP02N60S5 | HGA155N15S

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