All MOSFET. SE85130GA Datasheet

 

SE85130GA MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE85130GA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 130 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO220

 SE85130GA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE85130GA Datasheet (PDF)

 ..1. Size:743K  cn sino-ic
 se85130ga.pdf

SE85130GA SE85130GA

SE85130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = 85VDSoperation voltage. This device is suitable for R =4.6m @ V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GSM7002K | SDF9N100JEC-S | IXFR102N30P

 

 
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