SE85210 Datasheet and Replacement
Type Designator: SE85210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 210 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 190 nS
Cossⓘ - Output Capacitance: 914 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO220 TO263
SE85210 substitution
SE85210 Datasheet (PDF)
se85210.pdf

SE85210N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =85VDSVoltage and Current Improved Shoot-Through R =3.0m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsS
Datasheet: SE80130GA , SE80160G , SE80250G , SE8090A , SE8090G , SE8205A , SE8209 , SE85130GA , 18N50 , SE8810 , SE8810A , SE8830T , SE8830A , SED8830MP , SED8830 , SED8830P , SED8830N .
History: TMAN11N90Z | SED14N65G
Keywords - SE85210 MOSFET datasheet
SE85210 cross reference
SE85210 equivalent finder
SE85210 lookup
SE85210 substitution
SE85210 replacement
History: TMAN11N90Z | SED14N65G



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