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SE85210 Specs and Replacement

Type Designator: SE85210

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 210 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 190 nS

Cossⓘ - Output Capacitance: 914 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO220 TO263

SE85210 substitution

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SE85210 datasheet

 ..1. Size:588K  cn sino-ic
 se85210.pdf pdf_icon

SE85210

SE85210 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =85V DS Voltage and Current Improved Shoot-Through R =3.0m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations S... See More ⇒

Detailed specifications: SE80130GA, SE80160G, SE80250G, SE8090A, SE8090G, SE8205A, SE8209, SE85130GA, STP80NF70, SE8810, SE8810A, SE8830T, SE8830A, SED8830MP, SED8830, SED8830P, SED8830N

Keywords - SE85210 MOSFET specs

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