All MOSFET. SE85210 Datasheet

 

SE85210 Datasheet and Replacement


   Type Designator: SE85210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 210 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 914 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO220 TO263
 

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SE85210 Datasheet (PDF)

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SE85210

SE85210N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =85VDSVoltage and Current Improved Shoot-Through R =3.0m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurationsS

Datasheet: SE80130GA , SE80160G , SE80250G , SE8090A , SE8090G , SE8205A , SE8209 , SE85130GA , 20N50 , SE8810 , SE8810A , SE8830T , SE8830A , SED8830MP , SED8830 , SED8830P , SED8830N .

History: DH012N03U

Keywords - SE85210 MOSFET datasheet

 SE85210 cross reference
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