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SE8810 Specs and Replacement

Type Designator: SE8810

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TSSOP

SE8810 substitution

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SE8810 datasheet

 ..1. Size:366K  cn sino-ic
 se8810.pdf pdf_icon

SE8810

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810 Dual N-Channel Enhancement Mode Field Effect Transistor Revision A Features For a single mosfet VDSS = 20 V RDS(ON) ... See More ⇒

 0.1. Size:334K  cn sino-ic
 se8810a.pdf pdf_icon

SE8810

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810A Dual N-Channel Enhancement Mode Field Effect Transistor Revision A Features For a single mosfet VDSS = 20 V RDS(ON) ... See More ⇒

Detailed specifications: SE80160G, SE80250G, SE8090A, SE8090G, SE8205A, SE8209, SE85130GA, SE85210, IRFP450, SE8810A, SE8830T, SE8830A, SED8830MP, SED8830, SED8830P, SED8830N, SE8831A

Keywords - SE8810 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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