All MOSFET. SE8830T Datasheet

 

SE8830T Datasheet and Replacement


   Type Designator: SE8830T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: TSSOP8
 

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SE8830T Datasheet (PDF)

 ..1. Size:503K  cn sino-ic
 se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf pdf_icon

SE8830T

SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON)

 9.1. Size:395K  cn sino-ic
 se8831a.pdf pdf_icon

SE8830T

Jul 2014SE8831ADual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =15.5m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin

Datasheet: SE8090A , SE8090G , SE8205A , SE8209 , SE85130GA , SE85210 , SE8810 , SE8810A , AO4407 , SE8830A , SED8830MP , SED8830 , SED8830P , SED8830N , SE8831A , SE8841A , SE8N65A .

History: MMN600DB012B

Keywords - SE8830T MOSFET datasheet

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