SE8830T MOSFET. Datasheet pdf. Equivalent
Type Designator: SE8830T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 189 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: TSSOP8
SE8830T Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE8830T Datasheet (PDF)
se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf
SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON)
se8831a.pdf
Jul 2014SE8831ADual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =15.5m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin
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