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SE8N65A Specs and Replacement

Type Designator: SE8N65A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 135 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO220F

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SE8N65A datasheet

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SE8N65A

Mar 2015 SE8N65A N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V = 650V DS low gate charge. It can be used in a wide R = 1.085 @ V =10V DS(ON) GS variety of application Pin configurations See Diagram below TO-220F Absolute Maximum Rati... See More ⇒

Detailed specifications: SE8830T, SE8830A, SED8830MP, SED8830, SED8830P, SED8830N, SE8831A, SE8841A, RFP50N06, SE9435, SE9926, SED10070GG, SED10080GG, SED14N65G, SED2145, SED3022M, SED3030M

Keywords - SE8N65A MOSFET specs

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