All MOSFET. SE8N65A Datasheet

 

SE8N65A Datasheet and Replacement


   Type Designator: SE8N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO220F
 

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SE8N65A Datasheet (PDF)

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SE8N65A

Mar 2015SE8N65AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 650VDSlow gate charge. It can be used in a wide R = 1.085 @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-220FAbsolute Maximum Rati

Datasheet: SE8830T , SE8830A , SED8830MP , SED8830 , SED8830P , SED8830N , SE8831A , SE8841A , SKD502T , SE9435 , SE9926 , SED10070GG , SED10080GG , SED14N65G , SED2145 , SED3022M , SED3030M .

History: SI4622DY | VBZL80N03

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