SE8N65A MOSFET. Datasheet pdf. Equivalent
Type Designator: SE8N65A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 29 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO220F
SE8N65A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE8N65A Datasheet (PDF)
..1. Size:539K cn sino-ic
se8n65a.pdf
se8n65a.pdf
Mar 2015SE8N65AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 650VDSlow gate charge. It can be used in a wide R = 1.085 @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-220FAbsolute Maximum Rati
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