SE9435 MOSFET. Datasheet pdf. Equivalent
Type Designator: SE9435
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 5.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOP8
SE9435 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE9435 Datasheet (PDF)
se9435.pdf
SHANGHAI August 2005 MICROELECTRONICS CO., LTD. SE9435 P-Channel Enhancement Mode Power MOSFET General Description Features The MOSFETs from SINO-IC provide the VDS = -30 V best combination of fast switching, low ID = -5.3 A on-resistance and cost-effectiveness. RDS(ON) = 0.050 @VGS = -10V Low gate charge. Fast switching speed. Applications Power management
se9435lt1.pdf
FM120-M WILLASTHRUSE9435LT130V P-Channel Enhancement-Mode MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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