All MOSFET. SE9926 Datasheet

 

SE9926 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
   Package: SOP8

 SE9926 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE9926 Datasheet (PDF)

 ..1. Size:422K  cn sino-ic
 se9926.pdf

SE9926 SE9926

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE9926 N-Channel Enhancement Mode Field Effect Transistor Revision:B External Dimensions Features VDS = 20V,ID = 6A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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