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SE9926 Specs and Replacement

Type Designator: SE9926

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm

Package: SOP8

SE9926 substitution

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SE9926 datasheet

 ..1. Size:422K  cn sino-ic
 se9926.pdf pdf_icon

SE9926

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE9926 N-Channel Enhancement Mode Field Effect Transistor Revision B External Dimensions Features VDS = 20V,ID = 6A RDS(ON) ... See More ⇒

Detailed specifications: SED8830MP, SED8830, SED8830P, SED8830N, SE8831A, SE8841A, SE8N65A, SE9435, AO3407, SED10070GG, SED10080GG, SED14N65G, SED2145, SED3022M, SED3030M, SED3032G, SED3080M

Keywords - SE9926 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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