All MOSFET. SE9926 Datasheet

 

SE9926 Datasheet and Replacement


   Type Designator: SE9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
   Package: SOP8
 

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SE9926 Datasheet (PDF)

 ..1. Size:422K  cn sino-ic
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SE9926

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE9926 N-Channel Enhancement Mode Field Effect Transistor Revision:B External Dimensions Features VDS = 20V,ID = 6A RDS(ON)

Datasheet: SED8830MP , SED8830 , SED8830P , SED8830N , SE8831A , SE8841A , SE8N65A , SE9435 , 4N60 , SED10070GG , SED10080GG , SED14N65G , SED2145 , SED3022M , SED3030M , SED3032G , SED3080M .

History: 2SK1142 | SPB100N06S2-05 | NCE60R360 | BSZ017NE2LS5I | 2SK3925-01 | ALD1106SBL | PJM3401PSC

Keywords - SE9926 MOSFET datasheet

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