All MOSFET. SED14N65G Datasheet

 

SED14N65G Datasheet and Replacement


   Type Designator: SED14N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: DFN5X6
 

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SED14N65G Datasheet (PDF)

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SED14N65G

SED14N65GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =650VDSVoltage and Current Improved Shoot-Through R =300m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations

Datasheet: SED8830N , SE8831A , SE8841A , SE8N65A , SE9435 , SE9926 , SED10070GG , SED10080GG , CS150N03A8 , SED2145 , SED3022M , SED3030M , SED3032G , SED3080M , SED3081M , SED30P30M , SED4060G .

History: 8N60KL-TF1-T | CSR24N15D | AOD538 | SSM6P28TU | RFP8P10

Keywords - SED14N65G MOSFET datasheet

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