SED2145 PDF and Equivalents Search

 

SED2145 Specs and Replacement

Type Designator: SED2145

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 48 nS

Cossⓘ - Output Capacitance: 685 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0189 typ Ohm

Package: DFN2X2-6L

SED2145 substitution

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SED2145 datasheet

 ..1. Size:218K  cn sino-ic
 sed2145.pdf pdf_icon

SED2145

Mar 2015 SED2145 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -12V DS operation voltage. This device is suitable for R =18.9m @V =-4.5 @I =-10A DS(ON) GS DS using as a load switch or in PWM applications. R =26m @V =-2.5 @I =-8.9A ... See More ⇒

Detailed specifications: SE8831A, SE8841A, SE8N65A, SE9435, SE9926, SED10070GG, SED10080GG, SED14N65G, IRF2807, SED3022M, SED3030M, SED3032G, SED3080M, SED3081M, SED30P30M, SED4060G, SED4060GM

Keywords - SED2145 MOSFET specs

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