All MOSFET. SED2145 Datasheet

 

SED2145 Datasheet and Replacement


   Type Designator: SED2145
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 685 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0189(typ) Ohm
   Package: DFN2X2-6L
 

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SED2145 Datasheet (PDF)

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SED2145

Mar 2015SED2145P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -12VDSoperation voltage. This device is suitable for R =18.9m @V =-4.5 @I =-10ADS(ON) GS DSusing as a load switch or in PWM applications. R =26m @V =-2.5 @I =-8.9A

Datasheet: SE8831A , SE8841A , SE8N65A , SE9435 , SE9926 , SED10070GG , SED10080GG , SED14N65G , NCEP15T14 , SED3022M , SED3030M , SED3032G , SED3080M , SED3081M , SED30P30M , SED4060G , SED4060GM .

History: NVS4409N | RUH1H139R | SWB090R08ET | BSC019N04NSG | SE100130GA | AP9564GM-HF | 4N60KL-TMS2-T

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