All MOSFET. SED4060G Datasheet

 

SED4060G Datasheet and Replacement


   Type Designator: SED4060G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN5X6
 

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SED4060G Datasheet (PDF)

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 sed4060g.pdf pdf_icon

SED4060G

SED4060GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =40VDSlow gate charge. It can be used in a wide R =7m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowD D D D5 6 7 81 2 3 4S S S GDFN5*6A

 0.1. Size:584K  cn sino-ic
 sed4060gm.pdf pdf_icon

SED4060G

SED4060GMN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =40VDSlow gate charge. It can be used in a wide R =7m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowSSSGDFN3*3Absolute Maximum Ratings

Datasheet: SED14N65G , SED2145 , SED3022M , SED3030M , SED3032G , SED3080M , SED3081M , SED30P30M , RU6888R , SED4060GM , SED5852 , SED8830A , SED8840 , APM2300CA , APM2301CA , APM2306A , APM2309A .

History: BSC040N08NS5 | SVGP069R5NSA | AON6514 | UF630L-TN3-R | OSG60R099HSZF | CED4060A | MCH3481

Keywords - SED4060G MOSFET datasheet

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