All MOSFET. SED4060G Datasheet

 

SED4060G Datasheet and Replacement


   Type Designator: SED4060G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 309 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN5X6
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SED4060G Datasheet (PDF)

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SED4060G

SED4060GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =40VDSlow gate charge. It can be used in a wide R =7m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowD D D D5 6 7 81 2 3 4S S S GDFN5*6A

 0.1. Size:584K  cn sino-ic
 sed4060gm.pdf pdf_icon

SED4060G

SED4060GMN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =40VDSlow gate charge. It can be used in a wide R =7m @V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowSSSGDFN3*3Absolute Maximum Ratings

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BLS70R420-B | SM4506NHKP | WMJ38N60C2 | AOD2N100 | AP03N40J-HF | RF1K49223 | 2SK3716

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