SED4060G MOSFET Datasheet: N-Ch, 40V, 60A. Full specification with pinout and replacement list

SED4060G Specs and Replacement

Type Designator: SED4060G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 309 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm

Package: DFN5X6

SED4060G substitution

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SED4060G datasheet

..1. Size:556K cn sino-ic
sed4060g.pdf pdf_icon

SED4060G N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V =40V DS low gate charge. It can be used in a wide R =7m @V =10V DS(ON) GS variety of application Pin configurations See Diagram below D D D D 5 6 7 8 1 2 3 4 S S S G DFN5*6 A... See More ⇒

0.1. Size:584K cn sino-ic
sed4060gm.pdf pdf_icon

SED4060GM N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology For a single MOSFET and design to provide excellent RDS(ON) with V =40V DS low gate charge. It can be used in a wide R =7m @V =10V DS(ON) GS variety of application Pin configurations See Diagram below S S S G DFN3*3 Absolute Maximum Ratings... See More ⇒

Detailed specifications: SED14N65G, SED2145, SED3022M, SED3030M, SED3032G, SED3080M, SED3081M, SED30P30M, AO3400A, SED4060GM, SED5852, SED8830A, SED8840, APM2300CA, APM2301CA, APM2306A, APM2309A