All MOSFET. SED5852 Datasheet

 

SED5852 Datasheet and Replacement


   Type Designator: SED5852
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: MICROFET2X2
 

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SED5852 Datasheet (PDF)

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SED5852

SHANGHAI June 2007 MICROELECTRONICS CO., LTD. Revision:A SED5852 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The SED5852 uses advanced trench technology to provide VDS(V) = -20V excellent RDS(ON) and low gate charge. A Schottky diode is ID = -3.4A ( VGS = -4.5V) provided to facilitate the implementation of a bidirectional R

Datasheet: SED3022M , SED3030M , SED3032G , SED3080M , SED3081M , SED30P30M , SED4060G , SED4060GM , STP65NF06 , SED8830A , SED8840 , APM2300CA , APM2301CA , APM2306A , APM2309A , APM2317A , APM2324AA .

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