All MOSFET. SED5852 Datasheet

 

SED5852 Datasheet and Replacement


   Type Designator: SED5852
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: MICROFET2X2
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SED5852 Datasheet (PDF)

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SED5852

SHANGHAI June 2007 MICROELECTRONICS CO., LTD. Revision:A SED5852 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The SED5852 uses advanced trench technology to provide VDS(V) = -20V excellent RDS(ON) and low gate charge. A Schottky diode is ID = -3.4A ( VGS = -4.5V) provided to facilitate the implementation of a bidirectional R

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STD70NS04ZL | HLML6401 | SPW11N60CFD | APT20M18LVFRG | 2SK3684-01S | PSMN005-30K | AP85T03GH-HF

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