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SED5852 Specs and Replacement

Type Designator: SED5852

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: MICROFET2X2

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SED5852 datasheet

 ..1. Size:615K  cn sino-ic
 sed5852.pdf pdf_icon

SED5852

SHANGHAI June 2007 MICROELECTRONICS CO., LTD. Revision A SED5852 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The SED5852 uses advanced trench technology to provide VDS(V) = -20V excellent RDS(ON) and low gate charge. A Schottky diode is ID = -3.4A ( VGS = -4.5V) provided to facilitate the implementation of a bidirectional R... See More ⇒

Detailed specifications: SED3022M, SED3030M, SED3032G, SED3080M, SED3081M, SED30P30M, SED4060G, SED4060GM, STP65NF06, SED8830A, SED8840, APM2300CA, APM2301CA, APM2306A, APM2309A, APM2317A, APM2324AA

Keywords - SED5852 MOSFET specs

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