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FCD4N60 Spec and Replacement


   Type Designator: FCD4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: DPAK

 FCD4N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCD4N60 Specs

 ..1. Size:922K  fairchild semi
 fcd4n60.pdf pdf_icon

FCD4N60

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 0.1. Size:478K  fairchild semi
 fcd4n60tf fcd4n60tm.pdf pdf_icon

FCD4N60

October 2013 FCD4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductor s first genera- tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance ... See More ⇒

Detailed specifications: FCB11N60 , 2SK3653 , FCB20N60 , 2SK3057 , 2SK3469-01MR , FCB20N60F , FCB36N60N , 2SJ279 , 10N60 , IRFD9020 , FCD5N60 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N .

History: HUFA76429D3 | TSA23N50M | PDC3902X

Keywords - FCD4N60 MOSFET specs

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