FCD4N60 Datasheet. Specs and Replacement

Type Designator: FCD4N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: DPAK

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FCD4N60 substitution

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FCD4N60 datasheet

 ..1. Size:922K  fairchild semi
 fcd4n60.pdf pdf_icon

FCD4N60

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 0.1. Size:478K  fairchild semi
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FCD4N60

October 2013 FCD4N60 N-Channel SuperFET MOSFET 600 V, 3.9 A, 1.2 Features Description 650 V @TJ = 150 C SuperFET MOSFET is Fairchild Semiconductor s first genera- tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 1.0 utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 12.8 nC) resistance ... See More ⇒

Detailed specifications: FCB11N60, 2SK3653, FCB20N60, 2SK3057, 2SK3469-01MR, FCB20N60F, FCB36N60N, 2SJ279, IRF3710, IRFD9020, FCD5N60, STU9916L, FCD7N60, STU816S, FCD9N60NTM, STU802S, FCH22N60N

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.