SM6166NHKP Datasheet and Replacement
Type Designator: SM6166NHKP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 47 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6A-8-EP
- MOSFET Cross-Reference Search
SM6166NHKP Datasheet (PDF)
sm6166nhkp.pdf

SM6166NHKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/47ADDDDRDS(ON)=9m(max.)@VGS=10VRDS(ON)=13.7m(max.)@VGS=4.5VGS Pin 1SS 100% UIS + Rg Tested Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(RoHS Compliant)(5,6,7,8)D D D DApplications Secondary Side Synchronous Rectification(4) G DC-
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SQ9407EY-T1 | CHM85A3PAGP | TK7P65W | ALD1103DB | SFFX054Z
Keywords - SM6166NHKP MOSFET datasheet
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History: SQ9407EY-T1 | CHM85A3PAGP | TK7P65W | ALD1103DB | SFFX054Z



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