SM6166NHKP Datasheet and Replacement
Type Designator: SM6166NHKP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 235 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6A-8-EP
SM6166NHKP substitution
SM6166NHKP Datasheet (PDF)
sm6166nhkp.pdf

SM6166NHKPN-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/47ADDDDRDS(ON)=9m(max.)@VGS=10VRDS(ON)=13.7m(max.)@VGS=4.5VGS Pin 1SS 100% UIS + Rg Tested Reliable and RuggedDFN5x6A-8_EP Lead Free and Green Devices Available(RoHS Compliant)(5,6,7,8)D D D DApplications Secondary Side Synchronous Rectification(4) G DC-
Datasheet: APM2360A , SM1A16PUB , SM1A63NHUC , SM3419NHQA , SM3429BSQA , SM4033NHKP , SM4500NHKP , SM4512NHKP , 5N50 , VS150N08BT , VS1606GS , VS2301BC , VS2522AL , VS2622AE , VS2N7002K , VS3508AE , VS3518AE .
History: SIS414DN | IXTQ30N60L2
Keywords - SM6166NHKP MOSFET datasheet
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History: SIS414DN | IXTQ30N60L2



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