VS150N08BT Specs and Replacement
Type Designator: VS150N08BT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 259 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 155 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 570 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220AB
VS150N08BT substitution
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VS150N08BT datasheet
vs150n08bt.pdf
VS150N08BT 80V/155A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10V 4.5 m N-Channel 10V Logic Level Control I D 155 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS150N08BT TO-220AB... See More ⇒
Detailed specifications: SM1A16PUB, SM1A63NHUC, SM3419NHQA, SM3429BSQA, SM4033NHKP, SM4500NHKP, SM4512NHKP, SM6166NHKP, AO4468, VS1606GS, VS2301BC, VS2522AL, VS2622AE, VS2N7002K, VS3508AE, VS3518AE, VS3522AE
Keywords - VS150N08BT MOSFET specs
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