All MOSFET. VS1606GS Datasheet

 

VS1606GS Datasheet and Replacement


   Type Designator: VS1606GS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 630 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8
 

 VS1606GS substitution

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VS1606GS Datasheet (PDF)

 ..1. Size:749K  cn vanguard
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VS1606GS

VS1606GS 100V/13A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 10.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 14.5 m Low on-resistance RDS(on) @ VGS=4.5 V I D 13 A VitoMOS Technology SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information

Datasheet: SM1A63NHUC , SM3419NHQA , SM3429BSQA , SM4033NHKP , SM4500NHKP , SM4512NHKP , SM6166NHKP , VS150N08BT , BS170 , VS2301BC , VS2522AL , VS2622AE , VS2N7002K , VS3508AE , VS3518AE , VS3522AE , VS3540AC .

History: 12N10L-TM3-T | IXFT23N80Q | 14N50G-TF1-T | AP9475GM | CEN2321A | 14N50L-TA3-T | BRCS120P012MC

Keywords - VS1606GS MOSFET datasheet

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