VS1606GS Specs and Replacement
Type Designator: VS1606GS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 630 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOP8
VS1606GS substitution
- MOSFET ⓘ Cross-Reference Search
VS1606GS datasheet
vs1606gs.pdf
VS1606GS 100V/13A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 10.5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 14.5 m Low on-resistance RDS(on) @ VGS=4.5 V I D 13 A VitoMOS Technology SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information ... See More ⇒
Detailed specifications: SM1A63NHUC, SM3419NHQA, SM3429BSQA, SM4033NHKP, SM4500NHKP, SM4512NHKP, SM6166NHKP, VS150N08BT, IRF730, VS2301BC, VS2522AL, VS2622AE, VS2N7002K, VS3508AE, VS3518AE, VS3522AE, VS3540AC
Keywords - VS1606GS MOSFET specs
VS1606GS cross reference
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VS1606GS substitution
VS1606GS replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SM1691OSCS | CMI100N04 | CS7N65FA9R | AP4543GEM-HF
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