All MOSFET. VS3508AE Datasheet

 

VS3508AE Datasheet and Replacement


   Type Designator: VS3508AE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: PDFN3333
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VS3508AE Datasheet (PDF)

 ..1. Size:1033K  cn vanguard
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VS3508AE

VS3508AE -30V/-47A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 8.5 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 15 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -47 A Fast Switching PDFN3333 Enhancement mode Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel in

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BUK626R2-40C | SM4186T9RL | WMM07N65C4 | NCE30P12BS | NP180N04TUJ | APT10021JFLL | SSW65R190S2

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