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VS3508AE Specs and Replacement

Type Designator: VS3508AE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 395 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: PDFN3333

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VS3508AE datasheet

 ..1. Size:1033K  cn vanguard
 vs3508ae.pdf pdf_icon

VS3508AE

VS3508AE -30V/-47A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 8.5 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 15 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -47 A Fast Switching PDFN3333 Enhancement mode Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel in... See More ⇒

Detailed specifications: SM4512NHKP, SM6166NHKP, VS150N08BT, VS1606GS, VS2301BC, VS2522AL, VS2622AE, VS2N7002K, 20N60, VS3518AE, VS3522AE, VS3540AC, VS3610AE, VS3618AE, VS3618BE, VS3620GPMC, VS3622AE

Keywords - VS3508AE MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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