All MOSFET. VS3508AE Datasheet

 

VS3508AE Datasheet and Replacement


   Type Designator: VS3508AE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 395 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: PDFN3333
 

 VS3508AE substitution

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VS3508AE Datasheet (PDF)

 ..1. Size:1033K  cn vanguard
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VS3508AE

VS3508AE -30V/-47A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 8.5 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 15 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -47 A Fast Switching PDFN3333 Enhancement mode Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel in

Datasheet: SM4512NHKP , SM6166NHKP , VS150N08BT , VS1606GS , VS2301BC , VS2522AL , VS2622AE , VS2N7002K , 20N60 , VS3518AE , VS3522AE , VS3540AC , VS3610AE , VS3618AE , VS3618BE , VS3620GPMC , VS3622AE .

History: 8N60KL-TF2-T | SVS7N60DD2TR | HGP098N10A | P3606BEA | NP82N06MLG | JCS9N95WA | UPA1913

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