VS3518AE PDF and Equivalents Search

 

VS3518AE Specs and Replacement

Type Designator: VS3518AE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: PDFN3333

VS3518AE substitution

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VS3518AE datasheet

 ..1. Size:662K  cn vanguard
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VS3518AE

VS3518AE -30V/-35A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 15 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 23 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -35 A Fast Switching and High efficiency PDFN3333 Enhancement mode Pb-free lead plating; RoHS compliant Part ID Package Type Marking Ta... See More ⇒

 9.1. Size:1080K  cn vgsemi
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VS3518AE

VS3510DS -30V/-10A Dual P-Channel Advanced Power MOSFET Features V DS -30 V R DS(on),TYP@ VGS=-10 V 13 m Dual P-Channel, -5V Logic Level Control R DS(on),TYP@ VGS=-4.5 V 19 m Enhancement mode I D -10 A Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching and High efficiency SOP8 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Packa... See More ⇒

Detailed specifications: SM6166NHKP, VS150N08BT, VS1606GS, VS2301BC, VS2522AL, VS2622AE, VS2N7002K, VS3508AE, IRF540N, VS3522AE, VS3540AC, VS3610AE, VS3618AE, VS3618BE, VS3620GPMC, VS3622AE, VS3622DE

Keywords - VS3518AE MOSFET specs

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