All MOSFET. VS3518AE Datasheet

 

VS3518AE Datasheet and Replacement


   Type Designator: VS3518AE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: PDFN3333
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VS3518AE Datasheet (PDF)

 ..1. Size:662K  cn vanguard
 vs3518ae.pdf pdf_icon

VS3518AE

VS3518AE -30V/-35A P-Channel Advanced Power MOSFET V DS -30 V Features R DS(on),TYP@ VGS=-10 V 15 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 23 m Low on-resistance RDS(on) @ VGS=-4.5 V I D -35 A Fast Switching and High efficiency PDFN3333 Enhancement mode Pb-free lead plating; RoHS compliant Part ID Package Type Marking Ta

 9.1. Size:1080K  cn vgsemi
 vs3510ds.pdf pdf_icon

VS3518AE

VS3510DS-30V/-10A Dual P-Channel Advanced Power MOSFETFeaturesV DS -30 VR DS(on),TYP@ VGS=-10 V 13 m Dual P-Channel, -5V Logic Level ControlR DS(on),TYP@ VGS=-4.5 V 19 m Enhancement modeI D -10 A Low on-resistance RDS(on) @ VGS=-4.5 V Fast Switching and High efficiencySOP8 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Packa

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: MCH3484 | DMN30H4D0L

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