VS3622DE
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3622DE
Marking Code: 3622DE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 20
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 140
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013
Ohm
Package:
PDFN3333
VS3622DE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3622DE
Datasheet (PDF)
..1. Size:735K cn vanguard
vs3622de.pdf 
VS3622DE 30V/35A Dual N-Channel Advanced Power MOSFET Features V DS 30 V R DS(on),TYP@ VGS=10 V 10 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 14 m Enhancement mode I D 35 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching PDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel
..2. Size:1034K cn vgsemi
vs3622de.pdf
VS3622DE30V/35A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 10 m Dual N-Channel, 5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 14 m Enhancement modeI D 35 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN3333 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking Pac
7.1. Size:1142K cn vgsemi
vs3622dp2.pdf
VS3622DP230V/42A Dual Asymmetric N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 7.5 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 11 m Enhancement modeI D 42 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching and High efficiencyPDFN5x6 Dual Opt2 100% Avalanche Tested Pb-free lead plating; RoHS compl
7.2. Size:1113K cn vgsemi
vs3622dp.pdf
VS3622DP30V/40A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 8.7 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 40 A Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested PDFN5x6 Dual Pb-free lead plating; RoHS compliantPart ID Package Type Markin
7.3. Size:1357K cn vgsemi
vs3622db.pdf
VS3622DB30V Dual Asymmetric N-Channel Advanced Power MOSFETV DS 30 30 VFeaturesR DS(on),TYP@ VGS=10 V 8.2 6 m Dual Asymmetric N-ChannelR DS(on),TYP@ VGS=4.5V 11 8.4 m High Current CapabilityI D 28 30 A Low on-resistance RDS(on) @ VGS=4.5 V Low Gate ChargeDFN3x3 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622DB DFN3x
7.4. Size:1056K cn vgsemi
vs3622ds.pdf
VS3622DS30V/12A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 10 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 14 m Enhancement modeI D 12 A Low on-resistance RDS(on) @ VGS=4.5 V High EffectiveSOP8 Pb-free lead plating; RoHS compliantPart ID Package Type Marking PackingVS3622DS SOP8 3622DS 300
7.5. Size:1108K cn vgsemi
vs3622dp3.pdf
VS3622DP330V/40A Dual N-Channel Advanced Power MOSFETFeaturesV DS 30 VR DS(on),TYP@ VGS=10 V 8.7 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 12 m Enhancement modeI D 40 A Low on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingPDFN5x6 Dual 100% Avalanche Tested Pb-free lead plating; RoHS compliantPart ID Package Type Marking P
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