VS4020AS
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS4020AS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 18
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
trⓘ - Rise Time: 17.5
nS
Cossⓘ -
Output Capacitance: 320
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075
Ohm
Package:
SOP8
VS4020AS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS4020AS
Datasheet (PDF)
..1. Size:571K cn vanguard
vs4020as.pdf 
VS4020AS 40V/18A N-Channel Advanced Power MOSFET Features V DS 40 V Low On-Resistance R DS(on),TYP@ VGS=10 V 6.0 m Fast Switching R DS(on),TYP@ VGS=4.5 V 7.5 m 100% Avalanche Tested I D 18 A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS4020AS designed by the trench processing techniques to achieve extremely
7.1. Size:765K cn vanguard
vs4020ap.pdf
VS4020AP 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 4.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.5 m Enhancement mode I D 80 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test PDFN5x6 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking i
8.1. Size:401K cn vanguard
vs40200at.pdf
VS40200AT 40V/200A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 2.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 3.5 m Enhancement mode I D 200 A Very low on-resistance RDS(on) @ VGS=4.5V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking
8.2. Size:1058K cn vgsemi
vs40200ap.pdf
VS40200AP40V/50A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 4.4 m Very low on-resistanceI D(Silicon Limited) 118 A Fast Switching and High efficiencyI D(Package Limited) 50 A 100% Avalanche TestedPDFN5x6Part ID Package Type Marking PackingVS40200AP PDFN5x6 40200AP 3000pcs/Reel
8.3. Size:858K cn vgsemi
vs40200atd.pdf
VS40200ATD40V/120A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.3 m Very low on-resistanceI D(Silicon Limited) 226 A Fast Switching and High efficiencyI D(Package Limited) 120 A 100% Avalanche testTO-263Part ID Package Type Marking PackingVS40200ATD TO-263 40200ATD 800pcs/Reel
8.4. Size:933K cn vgsemi
vs40200ad.pdf
VS40200AD40V/80A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.8 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.6 m Very low on-resistanceI D(Silicon Limited) 165 A Fast Switching and High efficiencyI D(Package Limited) 80 A 100% Avalanche TestedTO-252Part ID Package Type Marking PackingVS40200AD TO-252 40200AD 2500pcs/Reel
8.5. Size:790K cn vgsemi
vs40200at.pdf
VS40200AT40V/120A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.3 m Very low on-resistanceI D(Silicon Limited) 226 A Fast Switching and High efficiencyI D(Package Limited) 120 A 100% Avalanche testTO-220ABPart ID Package Type Marking PackingVS40200AT TO-220AB 40200AT 50pcs/Tube
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
