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VS4020AS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VS4020AS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17.5 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: SOP8

 Аналог (замена) для VS4020AS

 

 

VS4020AS Datasheet (PDF)

 ..1. Size:571K  cn vanguard
 vs4020as.pdf

VS4020AS VS4020AS

VS4020AS 40V/18A N-Channel Advanced Power MOSFET Features V DS 40 V Low On-Resistance R DS(on),TYP@ VGS=10 V 6.0 m Fast Switching R DS(on),TYP@ VGS=4.5 V 7.5 m 100% Avalanche Tested I D 18 A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS4020AS designed by the trench processing techniques to achieve extremely

 7.1. Size:765K  cn vanguard
 vs4020ap.pdf

VS4020AS VS4020AS

VS4020AP 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 4.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 5.5 m Enhancement mode I D 80 A Very low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test PDFN5x6 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking i

 8.1. Size:401K  cn vanguard
 vs40200at.pdf

VS4020AS VS4020AS

VS40200AT 40V/200A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10V 2.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 3.5 m Enhancement mode I D 200 A Very low on-resistance RDS(on) @ VGS=4.5V 100% Avalanche test TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking

 8.2. Size:1058K  cn vgsemi
 vs40200ap.pdf

VS4020AS VS4020AS

VS40200AP40V/50A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10V 3.3 m Enhancement modeR DS(on),TYP@ VGS=4.5V 4.4 m Very low on-resistanceI D(Silicon Limited) 118 A Fast Switching and High efficiencyI D(Package Limited) 50 A 100% Avalanche TestedPDFN5x6Part ID Package Type Marking PackingVS40200AP PDFN5x6 40200AP 3000pcs/Reel

 8.3. Size:858K  cn vgsemi
 vs40200atd.pdf

VS4020AS VS4020AS

VS40200ATD40V/120A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.3 m Very low on-resistanceI D(Silicon Limited) 226 A Fast Switching and High efficiencyI D(Package Limited) 120 A 100% Avalanche testTO-263Part ID Package Type Marking PackingVS40200ATD TO-263 40200ATD 800pcs/Reel

 8.4. Size:933K  cn vgsemi
 vs40200ad.pdf

VS4020AS VS4020AS

VS40200AD40V/80A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.8 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.6 m Very low on-resistanceI D(Silicon Limited) 165 A Fast Switching and High efficiencyI D(Package Limited) 80 A 100% Avalanche TestedTO-252Part ID Package Type Marking PackingVS40200AD TO-252 40200AD 2500pcs/Reel

 8.5. Size:790K  cn vgsemi
 vs40200at.pdf

VS4020AS VS4020AS

VS40200AT40V/120A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 3.5 m Enhancement modeR DS(on),TYP@ VGS=4.5 V 4.3 m Very low on-resistanceI D(Silicon Limited) 226 A Fast Switching and High efficiencyI D(Package Limited) 120 A 100% Avalanche testTO-220ABPart ID Package Type Marking PackingVS40200AT TO-220AB 40200AT 50pcs/Tube

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