VS4080AI Specs and Replacement
Type Designator: VS4080AI
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: QIPAK
VS4080AI substitution
- MOSFET ⓘ Cross-Reference Search
VS4080AI datasheet
vs4080ai.pdf
VS4080AI 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 6 m Low on-resistance RDS(on) @ VGS=4.5 V I D 80 A Fast Switching and High efficiency QIPAK 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS4080AI QIPAK ... See More ⇒
Detailed specifications: VS3618BE, VS3620GPMC, VS3622AE, VS3622DE, VS3640DS, VS40200AT, VS4020AP, VS4020AS, IRF3710, VS4410AT, VS4518AD, VS4602AP, VS4604AP, VS4618AE, VS4N65CD, VS5810AS, VS5814DS
Keywords - VS4080AI MOSFET specs
VS4080AI cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WSD3042DN56 | WSD3028DN | WSC60N03
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