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VS4080AI Specs and Replacement

Type Designator: VS4080AI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: QIPAK

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VS4080AI datasheet

 ..1. Size:566K  cn vanguard
vs4080ai.pdf pdf_icon

VS4080AI

VS4080AI 40V/80A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 5 m Enhancement mode R DS(on),TYP@ VGS=4.5 V 6 m Low on-resistance RDS(on) @ VGS=4.5 V I D 80 A Fast Switching and High efficiency QIPAK 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS4080AI QIPAK ... See More ⇒

Detailed specifications: VS3618BE, VS3620GPMC, VS3622AE, VS3622DE, VS3640DS, VS40200AT, VS4020AP, VS4020AS, IRF3710, VS4410AT, VS4518AD, VS4602AP, VS4604AP, VS4618AE, VS4N65CD, VS5810AS, VS5814DS

Keywords - VS4080AI MOSFET specs

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