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VS4410AT Specs and Replacement

Type Designator: VS4410AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220AB

VS4410AT substitution

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VS4410AT datasheet

 ..1. Size:578K  cn vanguard
 vs4410at.pdf pdf_icon

VS4410AT

VS4410AT 100V/110A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS4410AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175 C junction opera... See More ⇒

Detailed specifications: VS3620GPMC, VS3622AE, VS3622DE, VS3640DS, VS40200AT, VS4020AP, VS4020AS, VS4080AI, 10N60, VS4518AD, VS4602AP, VS4604AP, VS4618AE, VS4N65CD, VS5810AS, VS5814DS, VS6016HS-A

Keywords - VS4410AT MOSFET specs

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