All MOSFET. VS4410AT Datasheet

 

VS4410AT MOSFET. Datasheet pdf. Equivalent


   Type Designator: VS4410AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB

 VS4410AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VS4410AT Datasheet (PDF)

 ..1. Size:578K  cn vanguard
 vs4410at.pdf

VS4410AT VS4410AT

VS4410AT 100V/110A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS4410AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175C junction opera

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RTM002P02T2L | FC6B21100L | MSF9N90 | AP9561GP-HF | LSGG08R060W3 | MCB160N10Y | SL2300

 

 
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