All MOSFET. VS4410AT Datasheet

 

VS4410AT Datasheet and Replacement


   Type Designator: VS4410AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 560 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB
 

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VS4410AT Datasheet (PDF)

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VS4410AT

VS4410AT 100V/110A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS4410AT designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175C junction opera

Datasheet: VS3620GPMC , VS3622AE , VS3622DE , VS3640DS , VS40200AT , VS4020AP , VS4020AS , VS4080AI , IRFB4227 , VS4518AD , VS4602AP , VS4604AP , VS4618AE , VS4N65CD , VS5810AS , VS5814DS , VS6016HS-A .

History: MTM6N90 | 14N50L-TA3-T | 14N50G-TF1-T | BRCS250N03DSC | CEN2321A | BRCS120P012MC | IXFT23N80Q

Keywords - VS4410AT MOSFET datasheet

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