All MOSFET. STU9916L Datasheet

 

STU9916L Datasheet and Replacement


   Type Designator: STU9916L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO252 DPAK
 

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STU9916L Datasheet (PDF)

 ..1. Size:113K  samhop
 stu9916l std9916l.pdf pdf_icon

STU9916L

GreenProductSTU/D9916LaS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.25 @ VGS=10VTO-252 and TO-251 Package.25A30V35 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 2

 ..2. Size:895K  cn vbsemi
 stu9916l.pdf pdf_icon

STU9916L

STU9916Lwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOL

Datasheet: 2SK3057 , 2SK3469-01MR , FCB20N60F , FCB36N60N , 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , IRFP250N , FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S .

History: STU666S | QM2401K

Keywords - STU9916L MOSFET datasheet

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