STU9916L Datasheet. Specs and Replacement

Type Designator: STU9916L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 93 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO252 DPAK

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STU9916L datasheet

 ..1. Size:113K  samhop
 stu9916l std9916l.pdf pdf_icon

STU9916L

Green Product STU/D9916L a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 25 @ VGS=10V TO-252 and TO-251 Package. 25A 30V 35 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 2... See More ⇒

 ..2. Size:895K  cn vbsemi
 stu9916l.pdf pdf_icon

STU9916L

STU9916L www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOL... See More ⇒

Detailed specifications: 2SK3057, 2SK3469-01MR, FCB20N60F, FCB36N60N, 2SJ279, FCD4N60, IRFD9020, FCD5N60, 2N7000, FCD7N60, STU816S, FCD9N60NTM, STU802S, FCH22N60N, STU670S, FCH25N60N, STU668S

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