STU9916L Spec and Replacement
Type Designator: STU9916L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Cossⓘ - Output Capacitance: 93 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO252 DPAK
STU9916L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STU9916L Specs
stu9916l std9916l.pdf
Green Product STU/D9916L a S mHop Microelectronics C orp. Ver 1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 25 @ VGS=10V TO-252 and TO-251 Package. 25A 30V 35 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 2... See More ⇒
stu9916l.pdf
STU9916L www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOL... See More ⇒
Detailed specifications: 2SK3057 , 2SK3469-01MR , FCB20N60F , FCB36N60N , 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , 2N7000 , FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S .
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