VS6412ASL MOSFET. Datasheet pdf. Equivalent
Type Designator: VS6412ASL
Marking Code: 6412AS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 91 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
VS6412ASL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS6412ASL Datasheet (PDF)
vs6412asl.pdf
VS6412ASL 60V/10A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 14.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 16.0 m Enhancement mode I D 10 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part
vs6412ae.pdf
VS6412AE 65V/30A N-Channel Advanced Power MOSFET V DS 65 V Features R DS(on),TYP@ VGS=10 V 19 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 22 m Enhancement mode I D 30 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology PDFN3333 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I
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