All MOSFET. VS6880AT Datasheet

 

VS6880AT Datasheet and Replacement


   Type Designator: VS6880AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 105 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB
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VS6880AT Datasheet (PDF)

 ..1. Size:715K  cn vanguard
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VS6880AT

VS6880AT 68V/105A N-Channel Advanced Power MOSFET V DS 68 V Features R DS(on),TYP@ VGS=10 V 6.1 m N-Channel10V Logic Level Control I D 105 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche Tested TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS6880AT TO-220AB

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: CSD17302Q5A | IRLU9343PBF | 2SK3437 | DCCF016M120G3 | MMP6463 | 15NM70L-TF34-T | VST012N06MS

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