All MOSFET. VS6880AT Datasheet

 

VS6880AT Datasheet and Replacement


   Type Designator: VS6880AT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 105 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11.8 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220AB
 

 VS6880AT substitution

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VS6880AT Datasheet (PDF)

 ..1. Size:715K  cn vanguard
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VS6880AT

VS6880AT 68V/105A N-Channel Advanced Power MOSFET V DS 68 V Features R DS(on),TYP@ VGS=10 V 6.1 m N-Channel10V Logic Level Control I D 105 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche Tested TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS6880AT TO-220AB

Datasheet: VS6018AS , VS6018BS , VS6038AD , VS6412AE , VS6412ASL , VS6614GS , VS6640AC , VS6808DH , AO3400 , VS7N65AD , VS7N65AF , VS8068AD , VS80N08AT , VS8205BH , VSB012N03MS , VSD004N03MS , VSD007N06MS .

History: SPN3414S23RGB | FHF4N65E

Keywords - VS6880AT MOSFET datasheet

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