VS6880AT MOSFET. Datasheet pdf. Equivalent
Type Designator: VS6880AT
Marking Code: 6880AT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 105 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 86 nC
trⓘ - Rise Time: 11.8 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO220AB
VS6880AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS6880AT Datasheet (PDF)
..1. Size:715K cn vanguard
vs6880at.pdf
vs6880at.pdf
VS6880AT 68V/105A N-Channel Advanced Power MOSFET V DS 68 V Features R DS(on),TYP@ VGS=10 V 6.1 m N-Channel10V Logic Level Control I D 105 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche Tested TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS6880AT TO-220AB
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
