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VS6880AT Specs and Replacement

Type Designator: VS6880AT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 105 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.8 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220AB

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VS6880AT datasheet

 ..1. Size:715K  cn vanguard
 vs6880at.pdf pdf_icon

VS6880AT

VS6880AT 68V/105A N-Channel Advanced Power MOSFET V DS 68 V Features R DS(on),TYP@ VGS=10 V 6.1 m N-Channel 10V Logic Level Control I D 105 A Enhancement mode Very low on-resistance RDS(on) @ VGS=10 V 100% Avalanche Tested TO-220AB Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VS6880AT TO-220AB... See More ⇒

Detailed specifications: VS6018AS, VS6018BS, VS6038AD, VS6412AE, VS6412ASL, VS6614GS, VS6640AC, VS6808DH, AO3401, VS7N65AD, VS7N65AF, VS8068AD, VS80N08AT, VS8205BH, VSB012N03MS, VSD004N03MS, VSD007N06MS

Keywords - VS6880AT MOSFET specs

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